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As one of the world’s top-tier memory semiconductor suppliers, Hynix Semiconductor Inc. offers Dynamic
Random Access Memory chips (“DRAMs”), Flash memory chips (“NAND Flash”) and CMOS Image Sensor (“CIS”)
to a wide range of distinguished customers globally.
The company has started mass production of 4xnm 1 GB GDDR5 graphics memory for its customers since January
2011.
In spite of the fact that Hynix has already introduced the 4xnm 2 GB GDDR5 in June of last year, the 1 GB GDDR5 is
the world’s first 4xnm graphics memory in terms of its density.
The product provides designers the bandwidth of 28GB (Gigabyte)/sec with 32 I/O (Input/Output) at 7Gbps speed.
It also operates at 1.35V power supply, thus guaranteeing an estimated 20% power reduction, especially in mobile applications, while extending battery operation time compared to 1.5V products.
The 4xnm 1Gb GDDR5 will fully meet the needs of 3D graphics and Full HD (High Definition)video, which requires
high performance graphics memory in desktop and notebook applications.
Its operating speed of up to 7Gbps ensures high performance graphics. Hynix has leading technology in the
high-end graphics market with its world’s first 4xnm2 GB GDDR5 followed by 1GB GDDR5.
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